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| PT4120 PT4120 s Features 1. 2-phase PT output type (Read pitch : 0.94 mm) 2. Compact, thin and flat package Side View and Thin Flat Type 2-Phase Output Phototransistor s Outline Dimensions Gate burr (Unit : mm) 1.8 0.7 0.7 Transparent epoxy resin 0.3 MAX. 2-C0.5 3.0 PT B PT A 1.5 4 4.0 1.0 4 4 MAX.0.1 4 0.15 Rugged resin 0.8 MAX. 1.4 3.9 0.8 16.51.0 18.0 + 1.5 - 1.0 (1.7) s Applications 1. Mouses 2. Track balls 3. Encoders Rugged resin 0.2 MAX. 3-0.45 + 0.3 - 0.1 1 2 3 (2.54) 56 5.0 2.0 3-0.4 + 0.3 - 0.1 (1.5) Shape of detector portion 0.17 0.47 0.81 1 Emitter (PT A) 2 Collector (common) 3 Emitter (PT B) 6 6 6 2.8 * Tolerance : 0.2 mm 6 1 2 3 s Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol VCEO VECO IC PC Topr Tstg Tsol Rating 35 6 20 75 - 25 to +85 - 40 to +85 260 (Ta = 25C) Unit V V mA mW C C C 0.47 1.4mm Soldering area *1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." 0.94 PT4120 s Electro-optical Characteristics Parameter Collector current Dark current Collector-emitter saturation voltage Collector-emitter breakdown voltage Emitter-collector breakdown voltage Peak sensitivity wavelength Response time 2-element I C variation Rise Time Fall Time Symbol *2 (Ta = 25C) Conditions EV = 1 000 lx VCE = 5V Ee = 0,VCE= 20V EV = 1 000 lx IC = 0.1mA IC = 0.1mA Ee = 0 IE = 0.01mA Ee = 0 MIN. 0.45 35 6 VCE = 2V,IC = 2mA RL = 100 IC(a)/IC(b) 0.7 TYP. 0.1 800 3.0 3.5 MAX. 1.8 0.1 0.4 1.3 Unit mA A V V V nm s s - IC ICEO VCE(sat) BVCEO BVECO p tr tf R *2 *2 *2 *2 *2 E v, E e : Illuminance, irradiance by CIE standard light source A (tungsten lamp) *3 Terminals other than test terminal shall be released. Fig. 1 Collector Power Dissipation vs. Ambient Temperature 80 Fig. 2 Dark Current vs. Ambient Temperature 10 -6 5 VCE = 20V Collector power dissipation P C (mW) 70 2 60 10 -7 Dark current I CEO (A) 0 25 50 75 85 100 5 2 50 40 30 20 10 10 -8 5 2 10 -9 5 2 0 - 25 10 -10 0 25 50 75 100 Ambient temperature Ta ( C) Ambient temperature Ta ( C) PT4120 Fig. 3 Relative Collector Current vs. Ambient Temperature 160 140 VCE = 5V EV = 1 000 lx Fig. 4 Collector Current vs. Illuminance 20.0 10.0 VCE = 5V Ta = 25C Relative collector current (%) 120 100 80 60 40 20 0 0 Collector current Ic (mA) 5.0 2.0 1.0 0.5 0.0 0.1 10 10 20 30 40 50 60 70 20 50 100 200 500 1000 2000 Ambient temperature Ta (C) Illuminance EV (lx) Fig. 5 Collector Current vs. Collector-emitter Voltage 1.6 1.4 Ev = 1 000 lx Fig. 6 Spectral Sensitivity 100 Ta = 25C 80 Collector current Ic (mA) 750 lx 1 0.8 0.6 0.4 0.2 0 0 250 lx 100 lx 500 lx Relative sensitivity (%) 1.2 60 40 20 5 10 15 20 25 30 35 0 400 500 600 700 800 900 1000 1100 Collector-emitter voltage V CE (V) Wavelength (nm) Fig. 7 Response Time vs. Load Resistance 100 50 VCE = 2V Ic = 2mA Ta = 25C Test Circuit for Response Time Response time t r,tf ( s) 20 10 5t f tr 2 1 0.1 Output Input tr tf Vcc RL Output 90% 10% tr tf 0.2 0.5 1 2 5 10 Load resistance RL (k ) PT4120 Fig. 9 Collector-emitter Saturation Voltage vs. Irradiance Collector-emitter saturation voltage VCE(sat)(V) 2 1.8 1.6 10 Fig. 10 Relative Output vs. Distance (Detector : GL4100) 100 Ta =25C IC =0.05mA IC =0.1mA IC =0.2mA IC=0.4mA 1.2 1.0 0.8 0.6 0.4 0.2 0 10 Relative output (%) 1.4 IC=0.6mA 1 0.1 100 1000 0.01 0.1 1 10 100 Irradiance E e (mW/cm2) Distance between emitter and detector d (mm) q Please refer to the chapter "Precautions for Use". (Page 78 to 93) |
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